| 摘要 |
The present invention discloses a method of forming a poly gate and a polycide gate with an equal height in a semiconductor device fabricated on a substrate, comprising the steps of forming the steps of forming a gate oxide layer on a substrate; sequentially depositing a poly-silicon layer and a capped dielectric layer; patterning a polycide gate by using a first photo-resist layer, and then etching the capped dielectric layer and a portion of the poly-silicon layer having a certain thickness; removing the first photo-resist layer; performing thermal oxidation on the poly-silicon layer so as to form a silicon oxide layer on the poly-silicon layer; forming spacers on the sidewall of the poly-silicon layer; depositing a silicide layer; patterning a poly gate by using a second photo-resist layer, and etching the silicide layer; anisotropically etching the poly-silicon layer; and finally removing the second photo-resist layer.
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