发明名称 High-side, low-side configurable driver
摘要 A high-side, low-side driver that controls voltage from a voltage source to an inductive or resistive load includes a power transistor with a gate, a source and a drain. The driver is configured in a high-side configuration when the load is connected between the source and ground and the drain is connected to the voltage source and in a low-side configuration when the load is connected between the drain and the voltage source and the source is connected to ground. A gate drive circuit turns the power transistor on and off. The positive clamp circuit is connected to the drain and the voltage source. The positive clamp circuit provides a recirculation path for inductive energy that is stored in the inductive load when a loss of reverse battery condition occurs or when ground is lost. A negative clamp circuit that is connected to the source and ground provides a recirculation path for inductive energy that is stored in the inductive load when a loss of reverse battery condition occurs and when battery voltage is lost in the high-side configuration. The power transistor is preferably an isolated lateral double-diffused metal oxide semiconductor field effect transistor (ILDMOSFET). A current limit circuit includes lateral NPN transistors. Multiple drivers may be integrated into a single chip for controlling voltage to multiple inductive loads.
申请公布号 US6348820(B1) 申请公布日期 2002.02.19
申请号 US20000617903 申请日期 2000.07.17
申请人 MOTOROLA, INC. 发明人 BENNETT PAUL T.;GRAY RANDALL C.;NEAVES MICHAEL GARRETT;DENICHOLAS JOSEPH V.
分类号 H03K17/06;H03K17/08;H03K17/0812;H03K17/0814;H03K17/082;(IPC1-7):H03B1/00;H03K3/00 主分类号 H03K17/06
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