| 摘要 |
Each layer of a three-layer structure composed of semiconductor (collector layer 13)/metal (base layer 14)/semiconductor (emitter layer 15) is formed from a nitride. By so doing, one identical constituent element (N) is contained in both semiconductor layers and the metal layer. Because Nb of the NbN base layer 14 combines with N to form a nitride at a stoichiometric ratio of 1:1, the resulting metal nitride and nitride semiconductor exhibit the same stoichiometric ratio. Therefore, it becomes possible to form the base layer 14 and the emitter layer 15 spatially continuously (interface bonding of 1:1), so that a successful Schottky junction can be obtained. As a result, an MBT superior in electrical characteristics can be obtained. Thus, the semiconductor device has successful Schottky characteristics so that superior characteristics can be obtained.
|
