| 摘要 |
The invention relates to an integrated CMOS circuit for use at high frequencies with active CMOS components (12) and passive components (16, 18, 20). The active CMOS components (12) are formed in a semiconductor substrate (10) which has a specific resistivity in the order of magnitude of kOMEGAcm. In the semiconductor substrate (10), and under the active CMOS components (12), a buried layer (22) is formed which has a specific resistivity in the order of magnitude of OMEGAcm. The passive components (16, 18, 20) are formed in or on a layer (14) of insulating material which is arranged on the semiconductor substrate (10). A conducting contact layer (24) is arranged on that surface of the semiconductor substrate (10) which is not facing the layer (14) of insulating material.
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