| 摘要 |
PROBLEM TO BE SOLVED: To suppress the dispersion of the state of formation of a nitride film and to accelerate the formation of the nitride film in forming the nitride film on a substrate containing aluminum metal. SOLUTION: A substrate containing at least aluminum metal is heat-treated in a vacuum of <=10-3 Torr. In succession to this heat treatment, nitriding treatment is applied under heating in an atmosphere containing at least nitrogen to form the nitride film. In this method, a porous body through which gas containing nitrogen atoms can be allowed to flow is heated under <=10-4 Torr pressure to carry out cleaning treatment, and then the porous body is brought into contact with the above-mentioned atmosphere at the nitriding under heating.
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