发明名称 Semiconductor integrated circuit having an improved voltage switching circuit
摘要 The present invention provides a circuitry comprising: a first switching transistor connected in series between an output node and a first voltage supply line which supplies a fist voltage level, the first switching transistor having a first control gate receiving a first control signal; and a second switching transistor connected in series between the output node and a second voltage supply line which supplies a second voltage level which is lower than the first voltage level, the second switching transistor having a second control gate receiving a second control signal, so that the first and second switching transistors are connected in series between the first and second voltage supply lines, wherein the first switching transistor has a first sub-gate which is connected to the output node, and the second switching transistor has a second sub-gate which is connected to the second voltage supply line.
申请公布号 US6348717(B1) 申请公布日期 2002.02.19
申请号 US19990385021 申请日期 1999.08.30
申请人 NEC CORPORATION 发明人 MIKI ATSUNORI
分类号 G11C11/407;H01L21/8234;H01L27/088;H01L27/10;H03K17/06;H03K19/0944;(IPC1-7):H01L29/76 主分类号 G11C11/407
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