| 摘要 |
PROBLEM TO BE SOLVED: To prevent increase in parasitic capacitance between a word line and a bit line and increase in bit line resistivity by a method wherein, after a source/drain diffusion region is formed by an ion implantation with the use of resist as a mask, an insulator film is formed on the source/drain diffusion region by a liquid phase growth method with the use of the resist as a mask. SOLUTION: For example, in a memory cell of a flat structure, with the use of a photoresist pattern 9 as a mask, a plurality of band-like source/drain diffusion regions 1 are formed in parallel at specific intervals on a P-type silicon substrate 5 by ion implantation. Thereafter, with the use of the photoresist pattern 9 as a mask, a SiO2 film 10 serving as an insulator film is formed on the source/drain diffusion regions 1 by a liquid phase growth method. Thereby, parasitic capacitance between a word line 2 and a bit line 1 can be reduced. Further, it is possible to suppress high resistivity of the bit line 1 due to an element separation between memory cell transistors, or impurity implantation onto the bit line 1 at the time of data write. |
