| 摘要 |
PROBLEM TO BE SOLVED: To provide a reforming method for a metal oxide film which can improve the characteristic of the film quality of the metal oxide film. SOLUTION: In the reforming method for subjecting by a reforming gas to a reform processing a metal oxide film 2 formed on the surface of a processed work W, the reforming gas, composed substantially of pure oxygen radicals, is adopted. Thereby, the characteristic of the film quality of the metal oxide film can be improved properly.
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