| 摘要 |
PROBLEM TO BE SOLVED: To improve the pattern accuracy of a bit line and wiring having different film thickness, to make shallow a through-hole which is to be formed between bit lines through self-alignment, and to reduce the resistance of the bit line and wiring, concerning a semiconductor device provided with a COB type DRAM. SOLUTION: This device is provided with a first insulating film formed on a wafer 1, first wiring groove 28e formed on the first insulating film 28 in a first region, second wiring groove 28f formed on the first insulating film 28 in a second region while having the same depth as the first wiring groove 28e, first wiring 6 embedded in the lower part of the first wiring groove 28e, second insulating film 35 embedded in the upper part of the first wiring groove 28e and formed of a material different from that of the first insulating film 28, and second wiring 13 composed of the same conductive member as the first wiring 6 and formed thicker than the first wiring 6 inside the second wiring groove 28f. |
