| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating the capacitor of a semiconductor element, in which the leakage current characteristics of a capacitor made of a TaON thin film can be improved. SOLUTION: The method for manufacturing the capacitor of a semiconductor element comprises a step for forming a rubidium film of lower electrode on a semiconductor substrate, a step for forming a thin film of amorphous TaON having superior permittivity on the rubidium film, a step for subjecting the entire structure in which the thin films are formed to primary heat treatment, a step for subjecting the entire structure to secondary heat treatment in order to crystallize the thin film of amorphous TaON, and a step for forming a metal film of upper electrode on the crystallized thin film of TaON. |
