发明名称 POSITIVE TYPE CHEMICAL AMPLIFICATION RESIST AND ITS PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a positive type chemical amplification resist using far ultraviolet light having <=220 nm wavelength as light for exposure, capable of preventing the falling and crumbling of a pattern and excellent in adhesion to a substrate and to provide a resist pattern forming method. SOLUTION: A resist pattern shape improver comprising a steroid compound is incorporated into a positive type chemical amplification resist by 0.5-8 pts.wt. based on 100 pts.wt. resin for a resist in the positive type chemical amplification resist. The steroid compound is, e.g. a cholic ester.
申请公布号 JP2002049157(A) 申请公布日期 2002.02.15
申请号 JP20000236106 申请日期 2000.08.03
申请人 NEC CORP 发明人 MAEDA KATSUMI;IWASA SHIGEYUKI;NAKANO KAICHIRO;HASEGAWA ETSUO
分类号 C08K5/00;C08K5/10;C08L33/14;G03F7/004;G03F7/039;H01L21/027 主分类号 C08K5/00
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