发明名称 |
POSITIVE TYPE CHEMICAL AMPLIFICATION RESIST AND ITS PATTERN FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type chemical amplification resist using far ultraviolet light having <=220 nm wavelength as light for exposure, capable of preventing the falling and crumbling of a pattern and excellent in adhesion to a substrate and to provide a resist pattern forming method. SOLUTION: A resist pattern shape improver comprising a steroid compound is incorporated into a positive type chemical amplification resist by 0.5-8 pts.wt. based on 100 pts.wt. resin for a resist in the positive type chemical amplification resist. The steroid compound is, e.g. a cholic ester. |
申请公布号 |
JP2002049157(A) |
申请公布日期 |
2002.02.15 |
申请号 |
JP20000236106 |
申请日期 |
2000.08.03 |
申请人 |
NEC CORP |
发明人 |
MAEDA KATSUMI;IWASA SHIGEYUKI;NAKANO KAICHIRO;HASEGAWA ETSUO |
分类号 |
C08K5/00;C08K5/10;C08L33/14;G03F7/004;G03F7/039;H01L21/027 |
主分类号 |
C08K5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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