| 摘要 |
PROBLEM TO BE SOLVED: To readily and surely establish a technique for realizing making operational rapidity of a semiconductor element for fixing to a silicon substrate surface to be easily applicable to mass production by heavy hydrogenation of the hydrogenated silicon substrate surface. SOLUTION: In the stabilization method of a silicon surface, a silicon substrate is immersed in heavy water or heavy hydrogen, containing solution comprising reducing ion and a hydrogenated surface is thereby subjected to heavy hydrogenation treatment. In the manufacturing method of a semiconductor device, stabilization method of a silicon surface is adopted.
|
