发明名称 HEAT TREATMENT METHOD OF SUBSTRATE AND CONTINUOUS HEAT TREATING FURNACE USED FOR IT
摘要 PROBLEM TO BE SOLVED: To provide the heat treatment method of a substrate capable of the equal heat treatment of the whole substrate by suppressing the temperature distribution caused in the substrate due to the thermal influence from the other adjacent heating chamber having the different mean temperature inside the chamber at the time of performing the heat treatment of the substrate containing a film-forming material in the heating chamber of a furnace. SOLUTION: In a heating chamber having the different mean temperature inside the chamber from at least one of the other adjacent heating chambers of a plurality of heating chambers divided to the conveying direction of an object to be heat-treated, the set temperature of each heating means provided in the heating chamber is controlled to be the different value in the conveying direction of the object to be heat-treated so as to provide the temperature in the heating chamber with a gradient. Thereby, the thermal influence exerted on the substrate that is being heat-treated in the heating chamber by the other adjacent heating chambers is offset, so that the substrate is equally heat-treated.
申请公布号 JP2002048475(A) 申请公布日期 2002.02.15
申请号 JP20000238538 申请日期 2000.08.07
申请人 NGK INSULATORS LTD 发明人 TANIGUCHI SATOSHI;NOIRI HIFUO;AOKI MICHIRO
分类号 F27B9/02;F27B9/06;F27B9/12;F27B9/36;F27B9/38;F27B9/40;F27D19/00;H01J9/02;H01J9/227;H01J17/49;H05K3/12;(IPC1-7):F27B9/02 主分类号 F27B9/02
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