发明名称 SEMICONDUCTOR RESISTIVE ELEMENT AND PRODUCTION METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor resistive element and a production method therefor, with which high resistance can be provided, while making the semiconductor resistor microscopic in size. SOLUTION: This semiconductor resistive element has a channel-forming layer 4 for forming the current channel of the resistor; a first semiconductor layer which is formed on the channel forming layer 4 and provided with a carrier supplying layer 5b, containing a first conductive impurity for supplying electric charges through a heterojunction, with the relevant channel forming layer to the current channel close to the relevant heterojunction; and a second semiconductor layer 5a which is formed on the first semiconductor layer and provided with a second conductive semiconductor area 10, containing a second conductive impurity for controlling the supply of the electric charges from the carrier supplying layer 5b to the current channel.
申请公布号 JP2002050741(A) 申请公布日期 2002.02.15
申请号 JP20000235776 申请日期 2000.08.03
申请人 SONY CORP 发明人 TOYAMA TAKAYUKI
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L27/04 主分类号 H01L27/04
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