| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can form a proper crystallized film with high yield and reduce the stress exerted on an amorphous film during temperature rise in a crystallizing process. SOLUTION: The manufacturing method comprises a step of forming, on a glass substrate 101 an absorptive film 103 containing an ultra-elastic material elastically deformable over several percents; a step of forming an amorphous silicon film 105 on the glass substrate 101; and a step of irradiating the absorptive film 103 with electromagnetic waves to heat this film 103 and to crystallize the silicon film 105, utilizing the heat thereof.
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