| 摘要 |
PROBLEM TO BE SOLVED: To provide a refreshing method for a semiconductor device such as VSRAM. SOLUTION: In a semiconductor device 1, a memory cell array is divided into a block (0) 22A, a block (1) 22B, a block (2) 22C and a block (3) 22D. In any block 22, in a period in which read-out or write-in of data is performed, refreshment of a memory cell selected by a word line of the (n)th row is performed in residual all other blocks 22. Refreshment is not performed in a memory cell selected by a word line of the (n+1)th row until refreshment in a memory cell selected by a word line of the (n)th row is performed in all block 22.
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