| 摘要 |
PROBLEM TO BE SOLVED: To obtain an accurate resist film pattern by forming a light shielding film. SOLUTION: A photoresist 42 shown in (b) is formed by spin coating on a substrate 41 shown in (a). A resist pattern 43 shown in (c) is formed by a photolithographic process. Then the resist pattern 43 is used as a mask to etch the substrate 41 as shown in (d), and the resist film pattern 43 is peeled from the substrate 41 as shown in (e) to obtain a pattern 41a with two surface levels. Then a chromium film 44 is formed as a light shielding film on the pattern 41a as shown in (f), and the chromium film 44 is polished as shown in (g) to flatten the surface of the chromium film 44. A photoresist 45 is applied on the polished chromium film 44 and a resist film pattern 46 is formed by a photolithographic process as shown in (h). |
