| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that uses metal having superior wettability, for securing superior connection reliability of terminal for external connections, and at the same time, can prevent decrease in reliability due to gaps being generated near the terminal for external connection. SOLUTION: On a semiconductor substrate 1, an electrode pad 2, and a first insulating layer 3 having a first opening 3c for exposing the electrode pad 2 are formed. On the first insulating layer 3, a wiring 6 is provided, and the upper and side surfaces of the wiring 6 are covered with a second insulating layer 8. Also, the second insulating layer 8 has a second opening 8a for exposing the upper surface of the wiring 6 on the wiring 6, and a third metal layer 7 is formed in a region exposed from the second opening 8a in the wiring 6. Via the third metal layer 7, the wiring 6 is connected to the terminal 9 for external connection.</p> |
