发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser in which fluctuation of optical output can be reduced when the amount of an input current is changed. SOLUTION: This semiconductor laser 10 generates a light at one wavelength in 0.8μm band, 0.9μm band, 1.3μm band and 1.5μm band, and is provided with a semiconductor optical amplifier element (SOA) 20 and an optical fiber 30 arranged so as to be coupled optically with a light output surface 20a of the SOA 20. In the optical fiber 30, a Bragg diffraction grating 32 is formed which constitutes a resonator together with a light reflecting surface 20b of the SOA 20. A full width at half maximumδλB of reflected spectrum of the diffraction grating 32 is at least 6 times and at most 11 times the longitudinal mode intervalδλe of laser determined by the light reflecting surface 20b and the Bragg diffraction grating 32.
申请公布号 JP2002050827(A) 申请公布日期 2002.02.15
申请号 JP20000233438 申请日期 2000.08.01
申请人 SUMITOMO ELECTRIC IND LTD;NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KATO TAKASHI;SHIOZAKI MANABU;SATO TOSHIYA;YAMAMOTO FUMIHIKO
分类号 G02B6/42;G02B6/122;H01S5/14;(IPC1-7):H01S5/14 主分类号 G02B6/42
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