| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, using an SOI for preventing nonuniformity in coating of a photoresist and disconnection in the step part of metal wiring caused by a sharp step formation, when the step of a silicon active layer and a semiconductor supporting substrate is increased, when forming the opening part of the semiconductor support substrate for forming a protecting element on the semiconductor supporting substrate. SOLUTION: By forming a side spacer, composed of a polycrystal silicon on the sidewall of the step between the silicon active layer and the semiconductor supporting substrate, the form of the step is improved.
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