| 摘要 |
PROBLEM TO BE SOLVED: To provide a new improve method for creating a crystalline alkaline- earth-metal oxide on an Si substrate. SOLUTION: This new improved method is the method, where, from an Si substrate accompanied on its surface by an amorphous silicon dioxide, a crystalline alkaline-earth-metal oxide is obtained on the Si substrate. The substrate is heated to a temperature within a range of 700-800 deg.C, and is exposed to the molecular beam of alkaline-earth-metal elements in a molecular-beam epitaxy-chamber, under a pressure which is within a range of about 10-9-10-10 Torr. During its molecular-beam epitaxy, its surface is monitored by a RHEED method for deciding the conversion of the amorphous silicon dioxide into an alkaline-earth-metal oxide. When the alkaline-earth-metal oxide is produced, a supplementary material layer, e.g. an alkaline-earth-metal oxide having a supplementary thickness, a single-crystal ferroelectric, or a high dielectric- constant oxide is produced on Si for the application of a nonvolatile high-density memory device.
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