发明名称 PROTECTION CIRCUIT OF SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To increase electrostatic breakdown voltage with a simple constitution. SOLUTION: A resistor R (or a coil) is connected in series a semiconductor laser device (LD chip 11) and a first capacitor C1 and a second capacitor C2 are respectively connected in parallel with the semiconductor laser device on both sides of the resistor R (or the coil) for arranging the capacitor C1 and C2 and the resistor R (or the coil) in the shape ofπ. In this way, a high electrostatic breakdown voltage can be obtained.
申请公布号 JP2002050825(A) 申请公布日期 2002.02.15
申请号 JP20000233295 申请日期 2000.08.01
申请人 SHARP CORP 发明人 SENDA JUN
分类号 H01S5/042;H01S5/068;(IPC1-7):H01S5/042 主分类号 H01S5/042
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