POLISHING METHOD, WIRING FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE,申请号KR20010021948-传众专利搜索

发明名称	POLISHING METHOD, WIRING FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要	PURPOSE: To provide a technology for suppressing scratch, peeling, dishing and erosion and for performing polishing at high speed. CONSTITUTION: Polishing is performed by using a polishing liquid, which includes oxidized material, phosphoric acid, organic acid, protection film forming agent and water.
申请公布号	KR20020012113(A)	申请公布日期	2002.02.15
申请号	KR20010021948	申请日期	2001.04.24
申请人	HITACHI.LTD.	发明人	HOMMA YOSHIO;KONDO SEIICHI;SAKUMA NORIYUKI
分类号	B24B37/00;B24B37/04;C09G1/02;C09K3/14;C09K13/00;H01L21/302;H01L21/304;H01L21/3065;H01L21/3205;H01L21/321;H01L21/461;H01L21/4763;H01L21/768;H01L21/8238;H01L23/52;H01L23/532;(IPC1-7):H01L21/304	主分类号	B24B37/00
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