| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element, using an MOS-type image sensor capable of further miniaturization on microscopic scale by suppressing a fixed pattern noise, based on electric charges discharged from defects on the interface or the like of an element isolation insulating film and a semiconductor layer. SOLUTION: A gate electrode 19 is formed on a gate insulating film 18 by patterning a conductive film; an element isolation electrode 19a is formed on an insulating film 18a in an element isolation region 113; and an opposite conductive impurity is led in, while using the gate electrode 19 and the element separating electrode 19a as a mask. Then, source regions 16a and 16b, drain regions 17a and 17b and an impurity region 17 are formed, and elements are isolated.
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