| 摘要 |
PROBLEM TO BE SOLVED: To provide a commonly usable test structure for evaluating an insulation film, even when the film under evaluation is comparatively thick or of a very thin film region. SOLUTION: A plurality of electrodes 2a-2j are formed on a silicon substrate 1. Insulation films 8a-8j under evaluation are formed between the electrodes 2a-2j and the substrate 1. A pad 3 for applying an evaluating voltage from outside is formed on the substrate 1, and the first ends of the electrodes 2a-2j are commonly connected to the pad 3 via diodes 6a-6j formed in the substrate 1 and a wiring 5 formed on the substrate 1. Pads 4a-4j for applying evaluating voltages from the outside are formed on the substrate 1. Second ends of the electrodes 2a-2j are connected to the pads 4a-4j via wirings 7a-7j formed on the substrate 1.
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