CHEMICAL VAPOR DEPOSITION METHOD FOR AMORPHOUS SILICON AND RESULTING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing an amorphous silicon thin film layer on a substrate at a very high deposition rate while maintaining excellent thin film quality. SOLUTION: The plasma volume in a process chamber is defined. A total flow velocity of a gaseous mixture introduced into the chamber (the total flow velocity of each gas) is also defined. A process parameter including the plasma volume and the total flow velocity are defined, and thereafter, the process parameter is held to prescribed values and prescriged relation in the process of the deposition of an amorphous silicon thin film.