FORMING METHOD FOR ELECTRODE BODY STRUCTURE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To lower interface resistance between a polysilicon film and a high- melting point metal film, in a gate electrode having a polymetal structure. SOLUTION: After a polysilicon film 12, a titanium film 14, a nitride titanium film 15A and a tungsten film 18 are deposited on a wafer 10 via a gate insulating film 11; an electrode body structure composed of these laminated films is formed; and heat treatment at >=750 deg.C is applied to this electrode body structure. Prior to the heat treatment process, titanium comprising the titanium film 14 has already been nitrided and changed into titanium nitride, and titanium silicide form will not be formed on the surface of the polysilicon film 12.