| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor film and its manufacturing method which heat treats and has an amorphous semiconductor film irradiated with a laser beam or strong rays, such as ultraviolet or infrared rays to crystallize this film, improves the orientation ratio of the obtained crystalline semiconductor film, and forms active regions with such a crystalline semiconductor film. SOLUTION: The semiconductor film uses a semiconductor film, having a crystal structure containing silicon as a main component where among lattice planes detected by the reflected electron diffraction pattern method, the plane 101} occupying proportion is 10% or more, and the plane 111} occupying proportion is less than 10%. Using a gas material of hydride, fluoride or chloride of silicon atoms, an amorphous semiconductor film is formed by the plasma CVD, using intermittent discharge at a repetition frequency of 10 kHz or lower and a duty ratio of 50% or less, and an element for accelerating the crystallization of the amorphous semiconductor film is introduced into the surface of this film to obtain a semiconductor film having a crystal structure for utilizing this element.
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