| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser of high reliability by suppressing defect and migration. SOLUTION: This semiconductor laser 1 is provided with an N-type substrate 10 in which protruding regions 10a and recessed regions 10b are formed adjacently, a function layer 20 in which an N-type clad layer 21, an active layer 22 and a P-type clad layer 23 are formed in this order in the protruding region 10a of the substrate 10, a buried layer 30 formed in the recessed part 10b of the substrate 10 in the same constitution as the function layer 20 and is buried in the recessed region 10b, a P-type first contact layer 11 formed on the function layer 20 and the buried layer 30, and an N-type current blocking layer 12 which is formed so as to be in contact with the whole end portion of at least the active layer 22, on the first contact layer 11 formed on the buried layer 30.
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