| 摘要 |
PROBLEM TO BE SOLVED: To provide an inter-layer metallization structure based on copper dual damascene, and to provide a method of forming it. SOLUTION: The lower-metal level is formed with an exposed metallization and an adjacent embedded stop layer 50. Both the metallization and embedded stop layer 50 have exposed surfaces approximately level with each other, with a lower dielectric layer 32. The upper metal level includes a second stop layer 30, deposited over the embedded stop layer 50 and the first metallization and a second dielectric layer. An inter-level via is etched through the second dielectric layer and the second stop layer 30, and the metal is filled into the via and is brought into contact with the metallization. If the inter-level via is offset over the edge of the metallization layer, the metal in the via contacts the embedded stop layer and not the first dielectric layer, whereby the embedded stop layer serves as a copper diffusion layer.
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