| 摘要 |
PROBLEM TO BE SOLVED: To suppress the dispersion of the state of formation of a nitride film or to accelerate the formation of the nitride film in forming the nitride film on a substrate containing aluminum metal. SOLUTION: The substrate containing at least aluminum metal is heat treated in vacuum of <=10-3 Torr and then subjected, in succession to the heat treatment, to nitriding under heating in an atmosphere 5 containing at least nitrogen. During the nitriding under heating, porous bodies 3 and 4 through which gases A and B containing nitrogen atoms can be allowed to flow are brought into contact with the atmosphere 5.
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