| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive type photoresist composition having improved marginal resolving power, development defects, linearity and dry etching resistance. SOLUTION: The positive type photoresist composition contains a polymer having repeating units with specified two acetal structures and having solubility in an alkali developing solution increased by decomposition under the action of an acid, a compound which generates the acid when irradiated with active light or radiation and a solvent. |
