| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growing method for nitride semiconductor, whereby a uniform crystal layer can be obtained with a high reproducibility by the vapor phase growth technology for gallium nitride compound semiconductors, etc. SOLUTION: The method comprises forming a protective film for obstructing the crystal growth on a substrate, so that a first nitride semiconductor layer is exposed through window regions partly opened through the protective film, starting the selective growth of a second nitride semiconductor layer from the first nitride semiconductor layer at a required growth starting temperature and rising the temperature over the growth starting temperature to continue the crystal growth. A uniform low-temperature grown layer is obtained by the vapor phase growth at a low temperature before temperature rise, and then a high-temperature grown layer is formed to form a uniform and highly reproducible crystal layer which reflects the uniformity of the low-temperature grown layer. |
