| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device, having an N-channel type thin-film transistor and a P-channel type thin-film transistor, which is connected to the N-channel type thin-film transistor. SOLUTION: This semiconductor device has the N-channel type thin-film transistor and the P-channel type thin-film transistor connected to the N-channel type thin-film transistor. In this case, the N-channel type thin-film transistor is to have a lightly doped region of a dose of 1×1013 to 5×1014 atoms/cm2 between a channel-formatting region, and source and drain regions, and the P-channel type thin-film transistor is to not have the lightly doped region.</p> |
