| 摘要 |
PROBLEM TO BE SOLVED: To detect a stored capacity (residual capacity), and inner state of a secondary cell represented by inner resistance with high accuracy, which is applicable even for a deteriorated cell. SOLUTION: For a normal secondary cell which is not deteriorated, after obtaining a cell voltage which should be measured at the time of discharge in various temperatures and with various charge currents, and a basic data which is the data of stored capacity or discharge capacity, in advance, and the voltage or the voltage and the current of the secondary cell in use, are measured and compared with the fundamental data, and the state of the secondary cell being measured is judged that it is in the state of either (a) short circuit, (b) inner resistance increase, (c) storage capacity decrease, (d) storage capacity decrease and inner resistance increase, or (e) normal, and the inner state of the secondary cell like storage capacity, residual capacity, and inner resistance represented by inner resistance, is detected according to the result of the judgment.
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