| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing generation of leakage current at a junction region and etch damage of silicon. CONSTITUTION: After forming a gate polysilicon layer(3) on a silicon substrate(1) having a field oxide layer(2), the gate polysilicon layer(3) located at a chip region of a wafer is selectively etched. An interlayer dielectric(4) is formed on the entire surface of the resultant structure. The interlayer dielectric(4) is firstly etched using a photoresist pattern(5) as a contact mask. At this time, the first etching is stopped when exposing the gate polysilicon layer(3) located at an edge region of the wafer. After setting etch target according to the thickness(t3) of the interlayer dielectric(4) remaining in the chip region, the second etching is performed, thereby forming a contact hole.
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