| 摘要 |
PROBLEM TO BE SOLVED: To provide a thickness-measuring element for a semiconductor film which is capable of easily and electrically measuring the thickness of an SOI layer, rather than introducing facilities, such as high-price film thickness measuring instruments, etc., for measuring the thickness of a silicon film (SOI layer) for forming an active layer on a SOI substrate. SOLUTION: A pair of SOI layers are surrounded with isolation trenches and are connected to an embedded oxide film on an SOI substrate, and one of the SOI layers has a p+-type diffused layer or oxide film formed shallower than the thickness of the SOI layer. The sheet resistance or the diffusion resistance of the pair of SOI layers is measured and simultaneous equations composed of the resistivity, and the effective thickness of the SOI layers are solved to readily obtain the thickness of the SOI layer.
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