发明名称 |
Semiconductor integrated circuit device and method for making the same |
摘要 |
A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
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申请公布号 |
US2002019124(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010933163 |
申请日期 |
2001.08.21 |
申请人 |
SUZUKI MASAYUKI;NISHIHARA SHINJI;SAHARA MASASHI;ISHIDA SHINICHI;ABE HIROMI;TOHDA SONOKO;UCHIYAMA HIROYUKI;TSUGANE HIDEAKI;YOSHIURA YOSHIAKI |
发明人 |
SUZUKI MASAYUKI;NISHIHARA SHINJI;SAHARA MASASHI;ISHIDA SHINICHI;ABE HIROMI;TOHDA SONOKO;UCHIYAMA HIROYUKI;TSUGANE HIDEAKI;YOSHIURA YOSHIAKI |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/522;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L23/52 |
代理机构 |
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