| 摘要 |
A flip-chip-type device is formed from a plurality of flip-chip semiconductor device units integrated together on a common substrate having a Group III nitride compound semiconductor layer. A sealing resin is laminated on a surface of the common substrate cured, and the substrate is then divided into individual sealed flip-chip semiconductor devices. Because the positive and negative electrodes are formed on the same side of the devices, the sealing resin need only be applied to the side of the substrate on which the electrodes are formed. Metal pillars may be formed on the electrodes and extend through the cured resin to electrically connect the flip-type semiconductor device to an external source and produce a self-contained package.
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