| 摘要 |
A semiconductor device having a photo diode which has substantially the same sensitivity to a plurality of light having different wavelengths, comprising a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed at a surface layer portion of said first conductivity type semiconductor layer, wherein the sensitivity to light of a first wavelength and the sensitivity to light of a second wavelength which is different from said first wavelength are made substantially the same by designing a region in which a depletion layer spreads from a junction of said first conductivity type semiconductor layer and said second conductivity type semiconductor layer when an inverse bias is applied to said first conductivity type semiconductor layer and said second conductivity type semiconductor layer, for example, by designing it to spread in a region of 3 to 6 mum or a region of 2 to 7 mum from the surface of the second conductivity type semiconductor layer in the depth direction.
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