发明名称 |
TIMER CIRCUIT AND SEMICONDUCTOR MEMORY INCORPORATING THE TIMER CIRCUIT |
摘要 |
A timer circuit exhibiting a timer period which decreases with a rise of temperature and increases with a fall of temperature. A diode (D) has a current characteristic depending on temperature. The forward current flow through an n-type MOS transistor (N1) constituting the primary side of a current mirror. Depending on the current flowing through the n-type MOS transistor (N1), the current flowing through a p-type MOS transistor (P2) and an n-type MOS transistor (N3) constituting the secondary side of the current mirror is determined. The current flowing through the p-type MOS transistor (P2) and the n-type MOS transistor (N3) is supplied as the operating current of a ring oscillator constituted of inverters (I1-I3). Therefore, the period (timer period) of a clock signal CLK outputted from the ring oscillator reflects the temperature characteristics of the diode (D), and the timer period decreases with a rise of temperature.
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申请公布号 |
WO0213384(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
WO2001JP06706 |
申请日期 |
2001.08.03 |
申请人 |
NEC CORPORATION;TAKAHASHI, HIROYUKI;SONODA, MASATOSHI;NAKAGAWA, ATSUSHI |
发明人 |
TAKAHASHI, HIROYUKI;SONODA, MASATOSHI;NAKAGAWA, ATSUSHI |
分类号 |
G11C5/00;G11C7/22;G11C8/18;G11C11/406;G11C11/4074;G11C11/4076;H03K3/011;H03K3/03;(IPC1-7):H03K3/03;G11C11/34 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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