| 发明名称 |
Method of manufacturing a semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device is provided. A polysilicon film and a rough-surfaced polysilicon film are formed on inter-layer insulating film including side and bottom surfaces of openings formed in inter-layer insulating film. A photoresist is formed on the rough-surfaced polysilicon film. The photoresist, the rough-surfaced polysilicon film and the polysilicon film that are located on the top surface of inter-layer insulating film are removed by the CMP method. The polysilicon film and rough-surfaced polysilicon film are etched in a predetermined atmosphere to make the position of the top end of storage nodes lower than the top surface of inter-layer insulating film.
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| 申请公布号 |
US2002019089(A1) |
申请公布日期 |
2002.02.14 |
| 申请号 |
US20010754120 |
申请日期 |
2001.01.05 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHIMIZU MASAHIRO;MIYAJIMA TAKASHI;MORIHARA TOSHINORI |
| 分类号 |
H01L21/8242;H01L21/02;H01L21/321;H01L27/108;(IPC1-7):H01L21/824;H01L21/331;H01L21/20 |
主分类号 |
H01L21/8242 |
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