发明名称 |
Systems and methods for two-sided etch of a semiconductor substrate |
摘要 |
A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.
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申请公布号 |
US2002017364(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010907127 |
申请日期 |
2001.07.16 |
申请人 |
LUO LAIZHONG;HOLDEN YING;GEORGE RENE;GUERRA ROBERT;WIESNOSKI ALLAN;KUHL NICOLE;RANFT CRAIG;MANTRIPRAGADA SAI |
发明人 |
LUO LAIZHONG;HOLDEN YING;GEORGE RENE;GUERRA ROBERT;WIESNOSKI ALLAN;KUHL NICOLE;RANFT CRAIG;MANTRIPRAGADA SAI |
分类号 |
H01L21/302;H01J37/32;H01L21/00;H01L21/3065;(IPC1-7):C23F1/02 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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