发明名称 Non-volatile memory with a charge pump with regulated voltage
摘要 A semiconductor memory includes a plurality of memory cells connected to one another to form a matrix of memory cells. A charge pump is connected to the matrix of memory cells. A plurality of controllable connection elements are provided, with each controllable connection element connected between an output terminal of the charge pump and a respective column line. Connected to the output of the charge pump is the series connection of a first element equivalent to a controllable connection element, and a second element equivalent to a memory cell in a predetermined biasing condition. A voltage regulator is connected between the second equivalent element and the input terminal of the charge pump for regulating the output voltage therefrom based upon a voltage present between terminals of the second equivalent element.
申请公布号 US2002018390(A1) 申请公布日期 2002.02.14
申请号 US20010909467 申请日期 2001.07.19
申请人 STMICROELECTRONICS S.R.I. 发明人 CONFALONIERI EMANUELE;BEDARIDA LORENZO;SALI MAURO;BARTOLI SIMONE
分类号 G11C16/30;(IPC1-7):G11C5/14 主分类号 G11C16/30
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