发明名称 |
Non-volatile memory with a charge pump with regulated voltage |
摘要 |
A semiconductor memory includes a plurality of memory cells connected to one another to form a matrix of memory cells. A charge pump is connected to the matrix of memory cells. A plurality of controllable connection elements are provided, with each controllable connection element connected between an output terminal of the charge pump and a respective column line. Connected to the output of the charge pump is the series connection of a first element equivalent to a controllable connection element, and a second element equivalent to a memory cell in a predetermined biasing condition. A voltage regulator is connected between the second equivalent element and the input terminal of the charge pump for regulating the output voltage therefrom based upon a voltage present between terminals of the second equivalent element.
|
申请公布号 |
US2002018390(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010909467 |
申请日期 |
2001.07.19 |
申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
CONFALONIERI EMANUELE;BEDARIDA LORENZO;SALI MAURO;BARTOLI SIMONE |
分类号 |
G11C16/30;(IPC1-7):G11C5/14 |
主分类号 |
G11C16/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|