| 摘要 |
A laser system for laser crystallisation of semiconductor films. It comprises a laser source (8) for producing a laser beam having a first intensity profile (10) in one transverse direction, and a lens system (12) for modifying the first intensity profile, the lens system comprising a plurality of lens elements (20a, 20b, 40a, 40b, 64a, 64b, 66a, 66b) adapted to divide the beam into a plurality of beamlets across the first intensity profile, at least one of the beamlets outputted by the lens system being inverted relative to the others, such that a desired intensity profile (50) is generated at the output of the laser system. |
