发明名称 |
INDIUM GALLIUM NITRIDE CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS, AND METHOD OF MAKING THE SAME |
摘要 |
A gallium nitride-based HEMT device, comprising a channel layer formed of an InGaN alloy. Such device may comprising an AlGaN/InGaN heterostructure, e.g., in a structure including a GaN layer, an InGaN layer over the GaN layer, and a (doped or undoped) AlGaN layer over the InGaN layer. Alternatively, the HEMT device of the invention may be fabricated as a device which does not comprise any aluminum-containing layer, e.g., a GaN/InGaN HEMT device or an InGaN/InGaN HEMT device.
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申请公布号 |
WO0213273(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
WO2001US23052 |
申请日期 |
2001.07.23 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;REDWING, JOAN, M.;PINER, EDWIN, L. |
发明人 |
REDWING, JOAN, M.;PINER, EDWIN, L. |
分类号 |
H01L29/812;H01L21/338;H01L29/20;H01L29/778;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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