发明名称 |
Chemical vapor deposition using organometallic precursors |
摘要 |
A multi-component layer is deposited on a semiconductor substrate in a semiconductor process. The multi-component layer may be a dielectric layer formed from a gaseous titanium organometallic precursor, reactive silane-based gas and a gaseous oxidant. The multi-component layer may be deposited in a cold wall or hot wall chemical vapor deposition (CVD) reactor, and in the presence or absence of plasma. The multi-component layer may also be deposited using other processes, such as radiant energy or rapid thermal CVD.
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申请公布号 |
US2002019116(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010962003 |
申请日期 |
2001.09.24 |
申请人 |
SANDHU GURTEJ S.;FAZAN PIERRE |
发明人 |
SANDHU GURTEJ S.;FAZAN PIERRE |
分类号 |
C23C16/40;H01L21/316;H01L21/8242;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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