| 摘要 |
A semiconductor device having resistance to static electricity damage under the CDM is disclosed. The semiconductor device may include a plurality of input/output terminals (102), a first reference electric potential connection (101) electrically connected to the terminals, an input/output protection element (103) electrically connected between the terminals and the first reference electric potential connection (101). A board electric potential generator (104) may provide a potential to a board electric potential connection. A clamp element (105) may be electrically connected between the first reference electric potential and the board electric potential connection.
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