发明名称 |
Semiconductor laser element and semiconductor laser |
摘要 |
In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.
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申请公布号 |
US2002018499(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010826851 |
申请日期 |
2001.04.06 |
申请人 |
KUNIYASU TOSHIAKI;HAYAKAWA TOSHIRO;FUKUNAGA TOSHIAKI |
发明人 |
KUNIYASU TOSHIAKI;HAYAKAWA TOSHIRO;FUKUNAGA TOSHIAKI |
分类号 |
H01S3/04;H01S3/0941;H01S5/02;H01S5/024;(IPC1-7):H01S3/04;H01S5/00 |
主分类号 |
H01S3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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