发明名称 Semiconductor laser element and semiconductor laser
摘要 In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.
申请公布号 US2002018499(A1) 申请公布日期 2002.02.14
申请号 US20010826851 申请日期 2001.04.06
申请人 KUNIYASU TOSHIAKI;HAYAKAWA TOSHIRO;FUKUNAGA TOSHIAKI 发明人 KUNIYASU TOSHIAKI;HAYAKAWA TOSHIRO;FUKUNAGA TOSHIAKI
分类号 H01S3/04;H01S3/0941;H01S5/02;H01S5/024;(IPC1-7):H01S3/04;H01S5/00 主分类号 H01S3/04
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