| 发明名称 |
Electrically programmable memory element with raised pore |
| 摘要 |
A programmable resistance memory element including a pore of memory material which is raised above a semiconductor substrate by a dielectric layer. The pore may be formed with the use of sidewall spacers.
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| 申请公布号 |
US2002017701(A1) |
申请公布日期 |
2002.02.14 |
| 申请号 |
US20010921038 |
申请日期 |
2001.08.02 |
| 申请人 |
KLERSY PATRICK;LOWREY TYLER |
发明人 |
KLERSY PATRICK;LOWREY TYLER |
| 分类号 |
H01L21/8238;G11C11/56;H01L27/092;H01L27/10;H01L27/105;H01L27/24;H01L45/00;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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